The area of Fet is 176 square kilometers.
the function of an FET is to f*ck, eat and teach
There are approximately 3.2808399 feet in one meter.
It means approx 3.76 metres high.
78 square meters is 839.585 square fet.
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
Disadvantage:Easy to damage when compared to BJT
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
in BJT forwardbiasing & reverse biasing are carried out but in FET voltage divider biasing &self biasing are carried out.
bjt is bipolar device whr fet is unipolar....fet is input resistance thts y fet gain is less compared to bjt..... The applications that will prefer bipolar junction transistors to field effect transistors are applications that require fast switching.
A FET (Field Effect Transistor) is mainly used when the input signal needs to be isolated from the output. A FET has a very high input resistance, so very little current is required from the input. Voltage gain is not the main objective when using a FET.
generally bjt is faster than fets...because of many intrinsic junction capacitances between ...source and drain and bulk and gate,,,.. but now a days due to advancement in scaling fet is reduced in size sooo much that it became faster than bjt... mosfet is faster because of scaling. small channel length. even though it is slower but distance to be travelled is less
JFET (Junction Field-Effect Transistor) is a voltage-controlled device where current flow is controlled by an electric field across a semiconductor junction. BJT (Bipolar Junction Transistor) is a current-controlled device where current flow is controlled by the amount of current entering the base terminal. JFETs are majority carrier devices, while BJTs are minority carrier devices.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
land pe char hai
BJT & FET parameters are temperature dependent. In BJT the collector junction resistance decreasing ( collector current increasing) with temperature raise.Due to the highe temperature & current transistor will damage quickly. In FET drain resistance increasing (drain current decreasing ) with increasing temperature.Due to this property it will not damage easily. We can say from the above two statements FET is more temperature stable.FET can use in highe temperature applications.
common emitter using fixed bias